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IRF520NPBF

  •  IRF520NPBF
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IRF520NPBF
Power Field-Effect Transistors
Infineon Technologies AG
Infineon Techno
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YES
TYPEDESCRIPTION
Source Content uid:IRF520NPBF
Manufacturer Part Number:IRF520NPBF
Rohs Code:Yes
Part Life Cycle Code:Active
Package Description:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliant
ECCN Code:EAR99
Manufacturer:Infineon Technologies AG
Risk Rank:0.76
Additional Feature:AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas):91 mJ
Case Connection:DRAIN
Configuration:SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:100 V
Drain Current-Max (Abs) (ID):9.5 A
Drain Current-Max (ID):9.7 A
Drain-source On Resistance-Max:0.2 Ω
FET Technology:METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:TO-220AB
JESD-30 Code:R-PSFM-T3
Number of Elements:1
Number of Terminals:3
Operating Mode:ENHANCEMENT MODE
Operating Temperature-Max:175 °C
Package Body Material:PLASTIC/EPOXY
Package Shape:RECTANGULAR
Package Style:FLANGE MOUNT
Peak Reflow Temperature (Cel):NOT SPECIFIED
Polarity/Channel Type:N-CHANNEL
Power Dissipation-Max (Abs):47 W
Pulsed Drain Current-Max (IDM):38 A
Qualification Status:Not Qualified
Subcategory:FET General Purpose Power
Surface Mount:NO
Terminal Form:THROUGH-HOLE
Terminal Position:SINGLE
Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
Transistor Application:SWITCHING
Transistor Element Material:SILICON
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