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IRFR5410TRLPBF

  •  IRFR5410TRLPBF
  • image of 功率场效应晶体管 IRFR5410TRLPBF
IRFR5410TRLPBF
Power Field-Effect Transistors
Infineon Technologies AG
Infineon Techno
-
YES
TYPEDESCRIPTION
Source Content uid:IRFR5410TRLPBF
Manufacturer Part Number:IRFR5410TRLPBF
Rohs Code:Yes
Part Life Cycle Code:Active
Package Description:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:not_compliant
ECCN Code:EAR99
Manufacturer:Infineon Technologies AG
Risk Rank:0.79
Additional Feature:HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas):194 mJ
Case Connection:DRAIN
Configuration:SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:100 V
Drain Current-Max (Abs) (ID):13 A
Drain Current-Max (ID):13 A
Drain-source On Resistance-Max:0.205 Ω
FET Technology:METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:TO-252AA
JESD-30 Code:R-PSSO-G2
JESD-609 Code:e3
Moisture Sensitivity Level:1
Number of Elements:1
Number of Terminals:2
Operating Mode:ENHANCEMENT MODE
Operating Temperature-Max:150 °C
Package Body Material:PLASTIC/EPOXY
Package Shape:RECTANGULAR
Package Style:SMALL OUTLINE
Peak Reflow Temperature (Cel):260
Polarity/Channel Type:P-CHANNEL
Power Dissipation-Max (Abs):66 W
Pulsed Drain Current-Max (IDM):52 A
Qualification Status:Not Qualified
Subcategory:Other Transistors
Surface Mount:YES
Terminal Finish:Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form:GULL WING
Terminal Position:SINGLE
Time@Peak Reflow Temperature-Max (s):30
Transistor Application:SWITCHING
Transistor Element Material:SILICON
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