+86 19924921798

RD3H200SNFRATL

  •  RD3H200SNFRATL
  • image of 功率场效应晶体管 RD3H200SNFRATL
RD3H200SNFRATL
Power Field-Effect Transistors
ROHM Semiconductor
ROHM Semiconduc
-
YES
TYPEDESCRIPTION
Manufacturer Part Number:RD3H200SNFRATL
Rohs Code:Yes
Part Life Cycle Code:Active
Package Description:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:compliant
ECCN Code:EAR99
Date Of Intro:2018-05-31
Manufacturer:ROHM Semiconductor
Risk Rank:0.94
Case Connection:DRAIN
Configuration:SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:45 V
Drain Current-Max (ID):20 A
Drain-source On Resistance-Max:0.04 Ω
FET Technology:METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:TO-252
JESD-30 Code:R-PSSO-G2
Number of Elements:1
Number of Terminals:2
Operating Mode:ENHANCEMENT MODE
Package Body Material:PLASTIC/EPOXY
Package Shape:RECTANGULAR
Package Style:SMALL OUTLINE
Peak Reflow Temperature (Cel):NOT SPECIFIED
Polarity/Channel Type:N-CHANNEL
Pulsed Drain Current-Max (IDM):40 A
Reference Standard:AEC-Q101
Surface Mount:YES
Terminal Form:GULL WING
Terminal Position:SINGLE
Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
Transistor Application:SWITCHING
Transistor Element Material:SILICON
1.jpg
 Orignal genuine       Each chip comes from the original factory


2.jpg
       

 Main products       Only make original stock


3.jpg
        

 Spot inventory       Only make original stock

4.jpg       

Original stockBom DistributioAffordable Price

captcha

+86-755-82760106

ruizhengwei@gmail.com
0