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BLF6G22LS-100,112

  •  BLF6G22LS-100,112
  • image of RF功率场效应晶体管 BLF6G22LS-100,112
BLF6G22LS-100,112
RF Power Field-Effect Transistors
NXP Semiconductors
NXP Semiconduct
-
YES
TYPEDESCRIPTION
Source Content uid:BLF6G22LS-100,112
Manufacturer Part Number:BLF6G22LS-100,112
Brand Name:NXP Semiconductor
Rohs Code:Yes
Part Life Cycle Code:Transferred
Part Package Code:SOT
Package Description:ROHS COMPLIANT, CERAMIC PACKAGE-2
Pin Count:2
Manufacturer Package Code:SOT502B
Reach Compliance Code:compliant
ECCN Code:EAR99
HTS Code:8541.29.00.75
Manufacturer:NXP Semiconductors
Risk Rank:5.27
Case Connection:SOURCE
Configuration:SINGLE
DS Breakdown Voltage-Min:65 V
Drain Current-Max (Abs) (ID):29 A
Drain Current-Max (ID):29 A
FET Technology:METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band:S BAND
JESD-30 Code:R-CDFP-F2
Number of Elements:1
Number of Terminals:2
Operating Mode:ENHANCEMENT MODE
Operating Temperature-Max:225 °C
Package Body Material:CERAMIC, METAL-SEALED COFIRED
Package Shape:RECTANGULAR
Package Style:FLATPACK
Peak Reflow Temperature (Cel):245
Polarity/Channel Type:N-CHANNEL
Qualification Status:Not Qualified
Subcategory:FET General Purpose Power
Surface Mount:YES
Terminal Form:FLAT
Terminal Position:DUAL
Time@Peak Reflow Temperature-Max (s):40
Transistor Application:AMPLIFIER
Transistor Element Material:SILICON
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