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PTFA092211FLV4XWSA1

  •  PTFA092211FLV4XWSA1
  • image of RF功率场效应晶体管 PTFA092211FLV4XWSA1
PTFA092211FLV4XWSA1
RF Power Field-Effect Transistors
Infineon Technologies AG
Infineon Techno
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YES
TYPEDESCRIPTION
Source Content uid:PTFA092211FLV4XWSA1
Manufacturer Part Number:PTFA092211FLV4XWSA1
Pbfree Code:Yes
Part Life Cycle Code:Transferred
Package Description:FLATPACK, R-XDFP-F2
Pin Count:2
Reach Compliance Code:unknown
ECCN Code:EAR99
Manufacturer:Infineon Technologies AG
Risk Rank:5.3
Additional Feature:HGH RELIABILITY
Case Connection:SOURCE
Configuration:SINGLE
DS Breakdown Voltage-Min:65 V
FET Technology:METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band:ULTRA HIGH FREQUENCY BAND
JESD-30 Code:R-XDFP-F2
Number of Elements:1
Number of Terminals:2
Operating Mode:ENHANCEMENT MODE
Operating Temperature-Max:200 °C
Package Body Material:UNSPECIFIED
Package Shape:RECTANGULAR
Package Style:FLATPACK
Peak Reflow Temperature (Cel):NOT SPECIFIED
Polarity/Channel Type:N-CHANNEL
Qualification Status:Not Qualified
Surface Mount:YES
Terminal Form:FLAT
Terminal Position:DUAL
Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
Transistor Application:AMPLIFIER
Transistor Element Material:SILICON
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