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PTFB192503FLV2XWSA1

  •  PTFB192503FLV2XWSA1
  • image of RF功率场效应晶体管 PTFB192503FLV2XWSA1
PTFB192503FLV2XWSA1
RF Power Field-Effect Transistors
Infineon Technologies AG
Infineon Techno
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YES
TYPEDESCRIPTION
Source Content uid:PTFB192503FLV2XWSA1
Manufacturer Part Number:PTFB192503FLV2XWSA1
Pbfree Code:Yes
Rohs Code:Yes
Part Life Cycle Code:Transferred
Package Description:GREEN, H-34288-4/2, 4 PIN
Pin Count:4
Reach Compliance Code:compliant
ECCN Code:EAR99
Manufacturer:Infineon Technologies AG
Risk Rank:5.28
Additional Feature:HIGH RELIABILITY
Case Connection:SOURCE
Configuration:SINGLE
DS Breakdown Voltage-Min:65 V
FET Technology:METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band:L BAND
JESD-30 Code:R-CDFP-F4
Number of Elements:1
Number of Terminals:4
Operating Mode:ENHANCEMENT MODE
Package Body Material:CERAMIC, METAL-SEALED COFIRED
Package Shape:RECTANGULAR
Package Style:FLATPACK
Peak Reflow Temperature (Cel):NOT SPECIFIED
Polarity/Channel Type:N-CHANNEL
Qualification Status:Not Qualified
Surface Mount:YES
Terminal Form:FLAT
Terminal Position:DUAL
Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
Transistor Application:AMPLIFIER
Transistor Element Material:SILICON
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