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BLV13

  •  BLV13
  • image of RF功率双极晶体管 BLV13
BLV13
RF Power Bipolar Transistors
NXP Semiconductors
NXP Semiconduct
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YES
TYPEDESCRIPTION
Source Content uid:BLV13
Manufacturer Part Number:BLV13
Part Life Cycle Code:Obsolete
Package Description:FLANGE MOUNT, O-CRFM-F4
Reach Compliance Code:unknown
ECCN Code:EAR99
Manufacturer:NXP Semiconductors
Risk Rank:5.26
Case Connection:ISOLATED
Collector Current-Max (IC):8 A
Collector-Emitter Voltage-Max:16.5 V
Configuration:SINGLE
DC Current Gain-Min (hFE):15
Highest Frequency Band:VERY HIGH FREQUENCY BAND
JESD-30 Code:O-CRFM-F4
Number of Elements:1
Number of Terminals:4
Operating Temperature-Max:200 °C
Package Body Material:CERAMIC, METAL-SEALED COFIRED
Package Shape:ROUND
Package Style:FLANGE MOUNT
Polarity/Channel Type:NPN
Power Gain-Min (Gp):8.5 dB
Qualification Status:Not Qualified
Surface Mount:NO
Terminal Form:FLAT
Terminal Position:RADIAL
Transistor Application:AMPLIFIER
Transistor Element Material:SILICON
Transition Frequency-Nom (fT):1650 MHz
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