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STB28N60M2

  •  STB28N60M2
  • image of 金属氧化物半导体场效应晶体管 STB28N60M2
STB28N60M2
Mosfets
STMicroelectronics
N-Channel 600 V
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Reel
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TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:150mΩ
Rated Power Dissipation:170|W
Qg Gate Charge:36nC
Package Style: TO-263-3 (D2PAK)
Mounting Method:Surface Mount
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 Orignal genuine       Each chip comes from the original factory


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 Spot inventory       Only make original stock

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Original stockBom DistributioAffordable Price

1000

32.4957

32495.7

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