|
STGWT80H65DFB | ST意法半导体 | IGBT 650V 120A 469W TO3P-3L |
DataSheet
|
56.0237 | |||
|
|
FS50R12KT4B15BOSA1 | Infineon英飞凌 | IGBT-模块-沟槽型场截止-三相反相器-1200V-50A-280W-底座安装-模块 |
DataSheet
|
1240.7448 | |||
|
|
IKW25N120T2 | Infineon英飞凌 | IGBT Trench 1200V 50A 349W Through Hole PG-TO247-3 |
DataSheet
|
- | |||
|
|
IGW15T120FKSA1 | Infineon英飞凌 | IGBT NPT, Trench Field Stop 1200V 30A 110W Through Hole PG-TO247-3 |
DataSheet
|
45.598 | |||
|
|
IKW75N60T | Infineon英飞凌 | Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AD |
DataSheet
|
68.957 |
