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UMG1NTR

  •  UMG1NTR
  • image of 晶体管-双极(BJT)-阵列,预偏置 UMG1NTR
UMG1NTR
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
ROHM Semiconductor
Transistors - B
-
Tape & Reel (TR)
YES
TYPEDESCRIPTION
Factory Lead Time13 Weeks
MountSurface Mount
Mounting TypeSurface Mount
Package / Case5-TSSOP, SC-70-5, SOT-353
Number of Pins5
PackagingTape & Reel (TR)
Published2011
JESD-609 Codee2
Pbfree Codeyes
Part StatusActive
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations5
ECCN CodeEAR99
Terminal FinishTIN COPPER
Max Operating Temperature150°C
Min Operating Temperature-55°C
Additional FeatureBUILT IN BIAS RESISTOR RATIO 1
SubcategoryBIP General Purpose Small Signal
Voltage - Rated DC50V
Max Power Dissipation300mW
Terminal FormGULL WING
Peak Reflow Temperature (Cel)260
Current Rating30mA
[email protected] Reflow Temperature-Max (s)10
Base Part Number*MG1
Pin Count5
Number of Elements2
PolarityNPN
ConfigurationCOMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor ApplicationSWITCHING
Transistor Type2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)300mV
Max Collector Current100mA
DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 5mA 5V
Current - Collector Cutoff (Max)500nA
Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage50V
Max Breakdown Voltage50V
Frequency - Transition250MHz
Emitter Base Voltage (VEBO)5V
hFE Min56
Resistor - Base (R1)22k Ω
Resistor - Emitter Base (R2)22k Ω
VCEsat-Max0.3 V
Height900μm
Length2.1mm
Width1.35mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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