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BFP405H6327XTSA1

  •  BFP405H6327XTSA1
  • image of 晶体管-双极(BJT)-射频 BFP405H6327XTSA1
BFP405H6327XTSA1
Transistors - Bipolar (BJT) - RF
Infineon Technologies
Transistors - B
-
Tape & Reel (TR)
YES
TYPEDESCRIPTION
Factory Lead Time4 Weeks
MountSurface Mount
Mounting TypeSurface Mount
Package / CaseSC-82A, SOT-343
Number of Pins3
Transistor Element MaterialSILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published2005
JESD-609 Codee3
Part StatusActive
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations4
TerminationSMD/SMT
ECCN CodeEAR99
Terminal FinishTin (Sn)
Max Power Dissipation55mW
Terminal PositionDUAL
Terminal FormGULL WING
Frequency25GHz
Base Part NumberBFP405
JESD-30 CodeR-PDSO-G4
Number of Elements1
ConfigurationSINGLE
Test Frequency1.8GHz
Power Dissipation75mW
Transistor ApplicationAMPLIFIER
Halogen FreeHalogen Free
Polarity/Channel TypeNPN
Transistor TypeNPN
Collector Emitter Voltage (VCEO)4.5V
Max Collector Current10mA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA 4V
Collector Emitter Breakdown Voltage4.5V
Gain23dB
Voltage - Collector Emitter Breakdown (Max)5V
Current - Collector (Ic) (Max)25mA
Transition Frequency25000MHz
Max Breakdown Voltage5V
Collector Base Voltage (VCBO)15V
Emitter Base Voltage (VEBO)1.5V
hFE Min50
Noise Figure (dB Typ @ f)1.25dB @ 1.8GHz
Radiation HardeningNo
REACH SVHCNo SVHC
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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