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IRF7311TRPBF

  •  IRF7311TRPBF
  • image of 晶体管-场效应晶体管,MOSFET-阵列 IRF7311TRPBF
IRF7311TRPBF
Transistors - FETs, MOSFETs - Arrays
Infineon Technologies
Transistors - F
-
Tape & Reel (TR)
YES
TYPEDESCRIPTION
Factory Lead Time12 Weeks
MountSurface Mount
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154, 3.90mm Width)
Number of Pins8
Transistor Element MaterialSILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published2004
SeriesHEXFET®
JESD-609 Codee3
Part StatusActive
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations8
ECCN CodeEAR99
Resistance29mOhm
Terminal FinishMatte Tin (Sn)
Additional FeatureAVALANCHE RATED, ULTRA LOW RESISTANCE
Voltage - Rated DC20V
Max Power Dissipation2W
Terminal FormGULL WING
Current Rating6.6A
Base Part NumberIRF7311PBF
Number of Elements2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation2W
Turn On Delay Time8.1 ns
FET Type2 N-Channel (Dual)
Transistor ApplicationSWITCHING
Rds On (Max) @ Id, Vgs29m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds900pF @ 15V
Gate Charge (Qg) (Max) @ Vgs27nC @ 4.5V
Rise Time17ns
Fall Time (Typ)31 ns
Turn-Off Delay Time38 ns
Continuous Drain Current (ID)6.6A
Threshold Voltage700mV
Gate to Source Voltage (Vgs)12V
Drain to Source Breakdown Voltage20V
Avalanche Energy Rating (Eas)100 mJ
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Recovery Time77 ns
FET FeatureLogic Level Gate
Height1.4986mm
Length4.9784mm
Width3.9878mm
Radiation HardeningNo
REACH SVHCNo SVHC
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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