 | |
| Orignal genuine | Each chip comes from the original factory |
| |
| Main products | Only make original stock |
| |
| Spot inventory | Only make original stock |
| |
| Original stock | Bom Distributio | Affordable Price |
| ： | IRF7314TRPBF |
|---|---|
| ： | Transistors - FETs, MOSFETs - Arrays |
| ： | Infineon Technologies |
| ： | Transistors - F |
| ： | - |
| ： | Tape & Reel (TR) |
| ： | YES |
| TYPE | DESCRIPTION |
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 58mOhm |
| Additional Feature | AVALANCHE RATED |
| Voltage - Rated DC | -20V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -5.3A |
| [email protected] Reflow Temperature-Max (s) | 30 |
| Base Part Number | IRF7314PBF |
| Number of Elements | 2 |
| Row Spacing | 6.3 mm |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 15 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 58m Ω @ 2.9A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 4.5V |
| Rise Time | 40ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 49 ns |
| Turn-Off Delay Time | 41 ns |
| Continuous Drain Current (ID) | -5.3A |
| Threshold Voltage | -700mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | -20V |
| Avalanche Energy Rating (Eas) | 150 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Recovery Time | 71 ns |
| FET Feature | Logic Level Gate |
| Nominal Vgs | -700 mV |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| |
| Orignal genuine | Each chip comes from the original factory |
| |
| Main products | Only make original stock |
| |
| Spot inventory | Only make original stock |
| |
| Original stock | Bom Distributio | Affordable Price |
1
0.899858
0.899858
10
0.738126
7.38126
30
0.62011
18.6033
100
0.520693
52.0693
500
0.50389
251.945
1000
0.498787
498.787
