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IRF7328TRPBF

  •  IRF7328TRPBF
  • image of 晶体管-场效应晶体管,MOSFET-阵列 IRF7328TRPBF
IRF7328TRPBF
Transistors - FETs, MOSFETs - Arrays
Infineon Technologies
Transistors - F
-
Tape & Reel (TR)
YES
TYPEDESCRIPTION
Factory Lead Time12 Weeks
Contact PlatingTin
MountSurface Mount
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154, 3.90mm Width)
Number of Pins8
Transistor Element MaterialSILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published2004
SeriesHEXFET®
JESD-609 Codee3
Part StatusActive
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations8
TerminationSMD/SMT
ECCN CodeEAR99
Resistance21MOhm
Additional FeatureULTRA LOW RESISTANCE
SubcategoryOther Transistors
Voltage - Rated DC-30V
Max Power Dissipation2W
Terminal FormGULL WING
Current Rating-8A
Base Part NumberIRF7328PBF
Number of Elements2
Row Spacing6.3 mm
Number of Channels2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation2W
Turn On Delay Time13 ns
FET Type2 P-Channel (Dual)
Transistor ApplicationSWITCHING
Rds On (Max) @ Id, Vgs21m Ω @ 8A, 10V
Vgs(th) (Max) @ Id2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds2675pF @ 25V
Current - Continuous Drain (Id) @ 25°C8A
Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
Rise Time15ns
Drain to Source Voltage (Vdss)30V
Fall Time (Typ)98 ns
Turn-Off Delay Time198 ns
Continuous Drain Current (ID)-8A
Threshold Voltage-1V
Gate to Source Voltage (Vgs)20V
Drain Current-Max (Abs) (ID)8A
Drain to Source Breakdown Voltage-30V
Dual Supply Voltage-30V
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Recovery Time56 ns
Max Junction Temperature (Tj)150°C
FET FeatureLogic Level Gate
Nominal Vgs-2.5 V
Height1.75mm
Length4.9784mm
Width3.9878mm
Radiation HardeningNo
REACH SVHCNo SVHC
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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