+86 19924921798

PD55003-E

  •  PD55003-E
  • image of 晶体管-场效应晶体管,MOSFET-射频 PD55003-E
PD55003-E
Transistors - FETs, MOSFETs - RF
STMicroelectronics
Transistors - F
-
Tube
YES
TYPEDESCRIPTION
Factory Lead Time25 Weeks
Lifecycle StatusACTIVE (Last Updated: 8 months ago)
MountSurface Mount
Package / CasePowerSO-10 Exposed Bottom Pad
Number of Pins3
PackagingTube
JESD-609 Codee3
Part StatusActive
Moisture Sensitivity Level (MSL)3 (168 Hours)
Number of Terminations2
ECCN CodeEAR99
Terminal FinishMatte Tin (Sn) - annealed
Max Operating Temperature165°C
Min Operating Temperature-65°C
Additional FeatureHIGH RELIABILITY
SubcategoryFET General Purpose Power
Voltage - Rated DC40V
Max Power Dissipation31.7W
Terminal PositionDUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel)250
Current Rating2.5A
Frequency500MHz
[email protected] Reflow Temperature-Max (s)30
Base Part NumberPD55003
Pin Count10
JESD-30 CodeR-PDSO-G2
Number of Elements1
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation31.7W
Case ConnectionSOURCE
Current - Test50mA
Transistor ApplicationAMPLIFIER
Drain to Source Voltage (Vdss)40V
Polarity/Channel TypeN-CHANNEL
Transistor TypeLDMOS
Continuous Drain Current (ID)2.5A
Gate to Source Voltage (Vgs)20V
Max Output Power3W
Drain to Source Breakdown Voltage40V
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Voltage - Test12.5V
Power Gain17dB
Height3.5mm
Length7.5mm
Width9.4mm
Radiation HardeningNo
REACH SVHCNo SVHC
RoHS StatusROHS3 Compliant
Lead FreeLead Free
PDF(1)
1.jpg
 Orignal genuine       Each chip comes from the original factory


2.jpg
       

 Main products       Only make original stock


3.jpg
        

 Spot inventory       Only make original stock

4.jpg       

Original stockBom DistributioAffordable Price

captcha

+86-755-82760106

ruizhengwei@gmail.com
0