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PD55015TR-E

  •  PD55015TR-E
  • image of 晶体管-场效应晶体管,MOSFET-射频 PD55015TR-E
PD55015TR-E
Transistors - FETs, MOSFETs - RF
STMicroelectronics
Transistors - F
-
Tape & Reel (TR)
YES
TYPEDESCRIPTION
Factory Lead Time25 Weeks
MountSurface Mount
Package / CasePowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Number of Pins3
PackagingTape & Reel (TR)
JESD-609 Codee3
Part StatusActive
Moisture Sensitivity Level (MSL)3 (168 Hours)
Number of Terminations2
ECCN CodeEAR99
Terminal FinishMATTE TIN
Max Operating Temperature165°C
Min Operating Temperature-65°C
Additional FeatureHIGH RELIABILITY
SubcategoryFET General Purpose Power
Max Power Dissipation73W
Terminal PositionDUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel)250
Reach Compliance Codenot_compliant
Current Rating5A
Frequency500MHz
[email protected] Reflow Temperature-Max (s)30
Base Part NumberPD55015
Pin Count10
JESD-30 CodeR-PDSO-G2
Qualification StatusNot Qualified
Number of Elements1
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation73W
Case ConnectionSOURCE
Current - Test150mA
Transistor ApplicationAMPLIFIER
Drain to Source Voltage (Vdss)40V
Polarity/Channel TypeN-CHANNEL
Transistor TypeLDMOS
Continuous Drain Current (ID)5A
Gate to Source Voltage (Vgs)20V
Gain14dB
Max Output Power15W
Drain Current-Max (Abs) (ID)7A
Drain to Source Breakdown Voltage40V
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Voltage - Test12.5V
Min Breakdown Voltage40V
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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