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PD57006-E

  •  PD57006-E
  • image of 晶体管-场效应晶体管,MOSFET-射频 PD57006-E
PD57006-E
Transistors - FETs, MOSFETs - RF
STMicroelectronics
Transistors - F
-
Tube
YES
TYPEDESCRIPTION
Lifecycle StatusNRND (Last Updated: 8 months ago)
MountSurface Mount
Package / CasePowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Number of Pins3
Weight4.535924g
PackagingTube
JESD-609 Codee3
Part StatusObsolete
Moisture Sensitivity Level (MSL)3 (168 Hours)
Number of Terminations2
ECCN CodeEAR99
Terminal FinishMatte Tin (Sn) - annealed
Max Operating Temperature165°C
Min Operating Temperature-65°C
SubcategoryFET General Purpose Power
Max Power Dissipation20W
Terminal PositionDUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel)250
Current Rating1A
Frequency945MHz
[email protected] Reflow Temperature-Max (s)30
Base Part NumberPD57006
Pin Count10
JESD-30 CodeR-PDSO-G2
Number of Elements1
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation20W
Case ConnectionSOURCE
Current - Test70mA
Transistor ApplicationAMPLIFIER
Drain to Source Voltage (Vdss)65V
Polarity/Channel TypeN-CHANNEL
Transistor TypeLDMOS
Continuous Drain Current (ID)1A
Gate to Source Voltage (Vgs)20V
Max Output Power6W
Drain Current-Max (Abs) (ID)1A
Drain to Source Breakdown Voltage65V
Input Capacitance27pF
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Voltage - Test28V
Min Breakdown Voltage65V
Power Gain15dB
Height3.5mm
Length7.5mm
Width9.4mm
Radiation HardeningNo
REACH SVHCNo SVHC
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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