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PD85025-E

  •  PD85025-E
  • image of 晶体管-场效应晶体管,MOSFET-射频 PD85025-E
PD85025-E
Transistors - FETs, MOSFETs - RF
STMicroelectronics
Transistors - F
-
Tube
YES
TYPEDESCRIPTION
Factory Lead Time25 Weeks
Lifecycle StatusACTIVE (Last Updated: 8 months ago)
MountSurface Mount
Package / CasePowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Number of Pins3
PackagingTube
JESD-609 Codee3
Part StatusActive
Moisture Sensitivity Level (MSL)3 (168 Hours)
Number of Terminations2
ECCN CodeEAR99
Terminal FinishMatte Tin (Sn)
Max Operating Temperature165°C
Min Operating Temperature-65°C
SubcategoryFET General Purpose Power
Max Power Dissipation79W
Terminal PositionDUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel)250
Reach Compliance Codenot_compliant
Current Rating7A
Frequency870MHz
[email protected] Reflow Temperature-Max (s)30
Base Part NumberPD85025
Pin Count10
JESD-30 CodeR-PDSO-G2
Qualification StatusNot Qualified
Number of Elements1
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation79W
Case ConnectionSOURCE
Current - Test300mA
Transistor ApplicationAMPLIFIER
Drain to Source Voltage (Vdss)40V
Polarity/Channel TypeN-CHANNEL
Transistor TypeLDMOS
Continuous Drain Current (ID)7A
Gate to Source Voltage (Vgs)15V
Gain17.3dB
Max Output Power30W
Drain Current-Max (Abs) (ID)7A
Drain to Source Breakdown Voltage40V
Power - Output10W
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Voltage - Test13.6V
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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