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IRG4PH50UPBF

  •  IRG4PH50UPBF
  • image of 晶体管-IGBT-单 IRG4PH50UPBF
IRG4PH50UPBF
Transistors - IGBTs - Single
Infineon Technologies
Transistors - I
-
Tube
YES
TYPEDESCRIPTION
Factory Lead Time14 Weeks
MountThrough Hole
Mounting TypeThrough Hole
Package / CaseTO-247-3
Number of Pins3
Transistor Element MaterialSILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published2000
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations3
TerminationThrough Hole
ECCN CodeEAR99
Additional FeatureLOW CONDUCTION LOSS
SubcategoryInsulated Gate BIP Transistors
Voltage - Rated DC1.2kV
Max Power Dissipation200W
Current Rating45A
Number of Elements1
Element ConfigurationSingle
Power Dissipation200W
Case ConnectionCOLLECTOR
Input TypeStandard
Turn On Delay Time35 ns
Transistor ApplicationPOWER CONTROL
Rise Time15ns
Polarity/Channel TypeN-CHANNEL
Turn-Off Delay Time200 ns
Collector Emitter Voltage (VCEO)3.7V
Max Collector Current45A
JEDEC-95 CodeTO-247AC
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max)1200V
Collector Emitter Saturation Voltage3.7V
Turn On Time49 ns
Test Condition960V, 24A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 24A
Turn Off Time-Nom (toff)600 ns
Gate Charge160nC
Current - Collector Pulsed (Icm)180A
Td (on/off) @ 25°C35ns/200ns
Switching Energy530μJ (on), 1.41mJ (off)
Gate-Emitter Voltage-Max20V
Gate-Emitter Thr Voltage-Max6V
Fall Time-Max (tf)500ns
Height20.3mm
Length15.875mm
Width5.3mm
Radiation HardeningNo
REACH SVHCNo SVHC
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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