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IRGP4063DPBF

  •  IRGP4063DPBF
  • image of 晶体管-IGBT-单 IRGP4063DPBF
IRGP4063DPBF
Transistors - IGBTs - Single
Infineon Technologies
Transistors - I
-
Tube
YES
TYPEDESCRIPTION
Factory Lead Time26 Weeks
MountThrough Hole
Mounting TypeThrough Hole
Package / CaseTO-247-3
Number of Pins3
Weight38.000013g
Transistor Element MaterialSILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published2006
Part StatusActive
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations3
ECCN CodeEAR99
SubcategoryInsulated Gate BIP Transistors
Voltage - Rated DC300V
Max Power Dissipation330W
Current Rating96A
Base Part NumberIRGP4063D
Number of Elements1
Element ConfigurationSingle
Power Dissipation330W
Case ConnectionCOLLECTOR
Input TypeStandard
Turn On Delay Time60 ns
Transistor ApplicationPOWER CONTROL
Rise Time56ns
Drain to Source Voltage (Vdss)300V
Polarity/Channel TypeN-CHANNEL
Turn-Off Delay Time145 ns
Collector Emitter Voltage (VCEO)2.14V
Max Collector Current96A
Reverse Recovery Time115 ns
Continuous Drain Current (ID)96A
JEDEC-95 CodeTO-247AC
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.14V
Turn On Time100 ns
Test Condition400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic2.14V @ 15V, 48A
Turn Off Time-Nom (toff)210 ns
IGBT TypeTrench
Gate Charge95nC
Current - Collector Pulsed (Icm)144A
Td (on/off) @ 25°C60ns/145ns
Switching Energy625μJ (on), 1.28mJ (off)
Gate-Emitter Voltage-Max20V
Gate-Emitter Thr Voltage-Max6.5V
Fall Time-Max (tf)46ns
Height20.3mm
Length15.875mm
Width5.3mm
Radiation HardeningNo
REACH SVHCNo SVHC
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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Original stockBom DistributioAffordable Price

1

12.25548

12.25548

10

10.981654

109.81654

30

10.781118

323.43354

100

10.481165

1048.1165

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