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4N25A(SHORT,F)

  •  4N25A(SHORT,F)
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4N25A(SHORT,F)
Photovoltaic Optoisolators
Toshiba Semiconductor and Storage
4N25A(SHORT,F)
-
6-DIP (0.300, 7.62mm)
YES
TYPEDESCRIPTION
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 6-DIP (0.300, 7.62mm)
Number of Pins 6
Operating Temperature -55°C~100°C
Packaging Tube
Published 2001
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 250mW
Base Part Number 4N25
Voltage - Isolation 2500Vrms
Output Type Transistor with Base
Number of Channels 1
Power Dissipation 250mW
Voltage - Forward (Vf) (Typ) 1.15V
Input Type DC
Forward Current 80mA
Max Output Voltage 30V
Output Current per Channel 100mA
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
Rise / Fall Time (Typ) 2μs 200μs
Reverse Breakdown Voltage 3V
Max Input Current 80mA
Collector Emitter Saturation Voltage 500mV
Current Transfer Ratio (Min) 20% @ 10mA
Current Transfer Ratio 100 %
RoHS Status RoHS Compliant
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