|
SBR5442RLCG
|
onsemi
|
|
- |
|
|
|
market price |
|
16CYQ045CSCS
|
Infineon
|
- |
- |
|
|
|
market price |
|
SMBT1231LT1G
|
onsemi
|
|
- |
|
|
|
0.121385 |
|
D1800N44TVFXPSA1
|
Infineon Technologies
|
|
DO-200AC, K-PUK |
|
Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.32V @ 1500A -40°C~160°C 100mA @ 4400V 2-Termination Bulk DO-200AC, K-PUK Chassis Mount |
|
market price |
|
JX1N7064CCU3C
|
Infineon
|
- |
- |
|
|
|
market price |
|
SIDC03D65C8X1SA1
|
Infineon
|
|
- |
|
|
|
market price |
|
BAS16J
|
NXP USA Inc.
|
- |
- |
|
|
|
market price |
|
SIDC08D65C8X1SA2
|
Infineon
|
- |
- |
|
|
|
market price |
|
IDP23013XUMA1
|
Infineon Technologies
|
|
- |
|
|
|
4.904578 |
|
SIDC110D170HX1SA2
|
Infineon Technologies
|
|
Die |
|
Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.8V @ 200A -55°C~150°C 27μA @ 1700V 1-Termination Bulk Die Surface Mount |
|
market price |
|
IDV08E65D2XKSA1
|
Infineon Technologies
|
|
TO-220-2 |
|
Standard Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 2.3V @ 8A -40°C~175°C 40μA @ 650V Tube TO-220-2 Through Hole |
|
market price |
|
SDT10S30
|
Infineon Technologies
|
|
TO-220-2 |
|
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.7V @ 10A -55°C~175°C 200μA @ 300V 2-Termination Tube TO-220-2 Through Hole |
|
21.578833 |
|
ESD5V3S1B-02LRHE6327
|
Infineon
|
- |
- |
|
|
|
market price |
|
IDD15E60BUMA2
|
Infineon Technologies
|
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
Standard Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 2V @ 15A -55°C~175°C 50μA @ 600V 2-Termination Tape & Reel (TR) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount |
|
1.535371 |
|
BAS16W
|
NXP USA Inc.
|
- |
- |
|
|
|
market price |
|
IDH10G65C6XKSA1
|
Infineon Technologies
|
|
TO-220-2 |
|
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.35V @ 10A -55°C~175°C 33μA @ 420V 2-Termination Tube TO-220-2 Through Hole |
|
33.180405 |
|
PESD5V0U1BA
|
NXP USA Inc.
|
- |
- |
|
|
|
0.043501 |
|
IDH03SG60CXKSA2
|
Infineon Technologies
|
|
TO-220-2 |
|
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 2.3V @ 3A -55°C~175°C 15μA @ 600V 2-Termination Tube TO-220-2 Through Hole |
|
3.778732 |
|
IDH16G65C6XKSA1
|
Infineon Technologies
|
|
TO-220-2 |
|
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.35V @ 16A -55°C~175°C 53μA @ 420V 2-Termination Tube TO-220-2 Through Hole |
|
64.824195 |
|
SSV1BAW56LT1G
|
onsemi
|
|
- |
|
|
|
market price |
|
CUS10S30,H3F
|
Toshiba Semiconductor and Storage
|
|
SC-76, SOD-323 |
|
Schottky Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 230mV @ 100mA 125°C Max 500μA @ 30V 2-Termination Tape & Reel (TR) SC-76, SOD-323 Surface Mount |
|
market price |
|
PMEG3010ER
|
NXP USA Inc.
|
- |
- |
|
|
|
0.1404 |
|
LT4320IDD#TRPBF
|
Analog Devices / Linear Technology
|
- |
- |
|
|
|
17.02 |
|
IDH12G65C5XKSA2
|
Infineon Technologies
|
|
TO-220-2 |
|
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.7V @ 12A -55°C~175°C 190μA @ 650V Tube TO-220-2 Through Hole |
|
market price |
|
IDL10G65C5XUMA2
|
Infineon Technologies
|
|
4-PowerTSFN |
|
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.7V @ 10A -55°C~150°C 180μA @ 650V 4-Termination Tape & Reel (TR) 4-PowerTSFN Surface Mount |
|
6.41746 |