+86 19924921798

HN1A01FE-GR,LF

  •  HN1A01FE-GR,LF
  • image of 阵列双极性结型晶体管 HN1A01FE-GR,LF
HN1A01FE-GR,LF
Arrays BJT Transistors
Toshiba Semiconductor and Storage
HN1A01FE-GR,LF
-
SOT-563, SOT-666
YES
TYPEDESCRIPTION
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Reach Compliance Code unknown
Polarity PNP
Power - Max 100mW
Gain Bandwidth Product 80MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
hFE Min 120
Continuous Collector Current -150mA
RoHS Status RoHS Compliant
1.jpg
 Orignal genuine       Each chip comes from the original factory


2.jpg
       

 Main products       Only make original stock


3.jpg
        

 Spot inventory       Only make original stock

4.jpg       

Original stockBom DistributioAffordable Price

1

12.4448

12.4448

10

11.742453

117.42453

100

11.08005

1108.005

500

10.456462

5228.231

1000

9.860625

9860.625

captcha

+86-755-82760106

ruizhengwei@gmail.com
0