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HN1B01F-GR(TE85L,F

  •  HN1B01F-GR(TE85L,F
  • image of 阵列双极性结型晶体管 HN1B01F-GR(TE85L,F
HN1B01F-GR(TE85L,F
Arrays BJT Transistors
Toshiba Semiconductor and Storage
HN1B01F-GR(TE85
-
SC-74, SOT-457
YES
TYPEDESCRIPTION
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Frequency 150MHz
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 300mW
Gain Bandwidth Product 80MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 100mV
Max Breakdown Voltage 50V
Frequency - Transition 120MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
RoHS Status RoHS Compliant
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 Orignal genuine       Each chip comes from the original factory


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Original stockBom DistributioAffordable Price

1

0.339918

0.339918

10

0.3203

3.203

100

0.301226

30.1226

500

0.282666

141.333

1000

0.264591

264.591

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