+86 19924921798

HN2A01FU-Y(TE85L,F

  •  HN2A01FU-Y(TE85L,F
  • image of 阵列双极性结型晶体管 HN2A01FU-Y(TE85L,F
HN2A01FU-Y(TE85L,F
Arrays BJT Transistors
Toshiba Semiconductor and Storage
HN2A01FU-Y(TE85
-
6-TSSOP, SC-88, SOT-363
YES
TYPEDESCRIPTION
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Polarity PNP
Element Configuration Dual
Power - Max 200mW
Gain Bandwidth Product 80MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 100mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
RoHS Status RoHS Compliant
1.jpg
 Orignal genuine       Each chip comes from the original factory


2.jpg
       

 Main products       Only make original stock


3.jpg
        

 Spot inventory       Only make original stock

4.jpg       

Original stockBom DistributioAffordable Price

1

1.259216

1.259216

10

1.1836

11.836

100

1.12

112

500

1.058302

529.151

1000

0.998398

998.398

captcha

+86-755-82760106

ruizhengwei@gmail.com
0