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BCR108SE6433HTMA1

  •  BCR108SE6433HTMA1
  • image of 双极性结型晶体管阵列 BCR108SE6433HTMA1
BCR108SE6433HTMA1
BJT Transistors Arrays
Infineon Technologies
BCR108SE6433HTM
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6-VSSOP, SC-88, SOT-363
YES
TYPEDESCRIPTION
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-6
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 250mW
Base Part Number BCR108S
Power - Max 250mW
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 170MHz
Resistor - Base (R1) 2.2kOhms
Resistor - Emitter Base (R2) 47kOhms
RoHS Status RoHS Compliant
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