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BCR183SH6433XTMA1

  •  BCR183SH6433XTMA1
  • image of 双极性结型晶体管阵列 BCR183SH6433XTMA1
BCR183SH6433XTMA1
BJT Transistors Arrays
Infineon Technologies
BCR183SH6433XTM
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6-VSSOP, SC-88, SOT-363
YES
TYPEDESCRIPTION
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2011
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Max Power Dissipation 250mW
Terminal Form GULL WING
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 200MHz
Frequency - Transition 200MHz
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 10k Ω
RoHS Status ROHS3 Compliant
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