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RN1611(TE85L,F)

  •  RN1611(TE85L,F)
  • image of 双极性结型晶体管阵列 RN1611(TE85L,F)
RN1611(TE85L,F)
BJT Transistors Arrays
Toshiba Semiconductor and Storage
RN1611(TE85L,F)
-
SC-74, SOT-457
YES
TYPEDESCRIPTION
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Number of Elements 2
Power - Max 300mW
Polarity/Channel Type NPN
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 10k Ω
RoHS Status RoHS Compliant
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 Orignal genuine       Each chip comes from the original factory


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Original stockBom DistributioAffordable Price

1

16.1568

16.1568

10

15.239623

152.39623

100

14.378323

1437.8323

500

13.561437

6780.7185

1000

12.797582

12797.582

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