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RN1906FE(T5L,F,T)

  •  RN1906FE(T5L,F,T)
  • image of 双极性结型晶体管阵列 RN1906FE(T5L,F,T)
RN1906FE(T5L,F,T)
BJT Transistors Arrays
Toshiba Semiconductor and Storage
RN1906FE(T5L,F,
-
SOT-563, SOT-666
YES
TYPEDESCRIPTION
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Packaging Tape & Reel (TR)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 100mW
Transistor Type 2 NPN - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 4.7kOhms
Resistor - Emitter Base (R2) 47kOhms
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