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RN2709JE(TE85L,F)

  •  RN2709JE(TE85L,F)
  • image of 双极性结型晶体管阵列 RN2709JE(TE85L,F)
RN2709JE(TE85L,F)
BJT Transistors Arrays
Toshiba Semiconductor and Storage
RN2709JE(TE85L,
-
SOT-553
YES
TYPEDESCRIPTION
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-553
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Reach Compliance Code unknown
Number of Elements 2
Power - Max 100mW
Polarity/Channel Type PNP
Transistor Type 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 47k Ω
Resistor - Emitter Base (R2) 22k Ω
RoHS Status RoHS Compliant
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 Orignal genuine       Each chip comes from the original factory


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Original stockBom DistributioAffordable Price

1

0.92

0.92

10

0.863962

8.63962

100

0.819398

81.9398

500

0.776225

388.1125

1000

0.724363

724.363

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