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RN2903,LF

  •  RN2903,LF
  • image of 双极性结型晶体管阵列 RN2903,LF
RN2903,LF
BJT Transistors Arrays
Toshiba Semiconductor and Storage
RN2903,LF datas
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6-TSSOP, SC-88, SOT-363
YES
TYPEDESCRIPTION
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Packaging Cut Tape (CT)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Power - Max 200mW
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 22k Ω
Resistor - Emitter Base (R2) 22k Ω
RoHS Status RoHS Compliant
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 Orignal genuine       Each chip comes from the original factory


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 Main products       Only make original stock


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 Spot inventory       Only make original stock

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Original stockBom DistributioAffordable Price

1

0.880112

0.880112

10

0.8352

8.352

100

0.781698

78.1698

500

0.739527

369.7635

1000

0.69861

698.61

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