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RN2961FE(TE85L,F)

  •  RN2961FE(TE85L,F)
  • image of 双极性结型晶体管阵列 RN2961FE(TE85L,F)
RN2961FE(TE85L,F)
BJT Transistors Arrays
Toshiba Semiconductor and Storage
RN2961FE(TE85L,
-
SOT-563, SOT-666
YES
TYPEDESCRIPTION
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code unknown
Number of Elements 2
Power - Max 100mW
Polarity/Channel Type PNP
Transistor Type 2 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 200MHz
Power Dissipation-Max (Abs) 0.1W
Resistor - Base (R1) 4.7k Ω
Resistor - Emitter Base (R2) 4.7k Ω
RoHS Status RoHS Compliant
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