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RN4603(TE85L,F)

  •  RN4603(TE85L,F)
  • image of 双极性结型晶体管阵列 RN4603(TE85L,F)
RN4603(TE85L,F)
BJT Transistors Arrays
Toshiba Semiconductor and Storage
RN4603(TE85L,F)
-
SC-74, SOT-457
YES
TYPEDESCRIPTION
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Reach Compliance Code unknown
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz 250MHz
Emitter Base Voltage (VEBO) 10V
hFE Min 70
Resistor - Base (R1) 22k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 22k Ω
RoHS Status RoHS Compliant
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Original stockBom DistributioAffordable Price

1

1.803968

1.803968

10

1.7028

17.028

100

1.604528

160.4528

500

1.518989

759.4945

1000

1.436027

1436.027

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