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BFP196WE6327HTSA1

  •  BFP196WE6327HTSA1
  • image of 射频双极性结型晶体管 BFP196WE6327HTSA1
BFP196WE6327HTSA1
RF BJT Transistors
Infineon Technologies
BFP196WE6327HTS
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SC-82A, SOT-343
YES
TYPEDESCRIPTION
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 700mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BFP196
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 700mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 8V
Collector Emitter Breakdown Voltage 12V
Gain 12.5dB ~ 19dB
Transition Frequency 7500MHz
Max Breakdown Voltage 12V
Frequency - Transition 7.5GHz
Collector Base Voltage (VCBO) 20V
Highest Frequency Band L B
Noise Figure (dB Typ @ f) 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
RoHS Status RoHS Compliant
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