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BFT25,215

  •  BFT25,215
  • image of 射频双极性结型晶体管 BFT25,215
BFT25,215
RF BJT Transistors
NXP USA Inc.
BFT25,215 datas
-
TO-236-3, SC-59, SOT-23-3
YES
TYPEDESCRIPTION
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFT25
Pin Count 3
Reference Standard CECC
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 30mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1mA 1V
Voltage - Collector Emitter Breakdown (Max) 5V
Current - Collector (Ic) (Max) 6.5mA
Transition Frequency 2300MHz
Frequency - Transition 2.3GHz
Power Dissipation-Max (Abs) 0.3W
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 0.6pF
Noise Figure (dB Typ @ f) 5.5dB @ 500MHz
Power Dissipation Ambient-Max 0.03W
RoHS Status ROHS3 Compliant
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Original stockBom DistributioAffordable Price

1

1.1839

1.1839

10

1.120283

11.20283

100

1.058569

105.8569

500

0.99865

499.325

1000

0.940424

940.424

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