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PBSS8510PA,115

  •  PBSS8510PA,115
  • image of 单个双极性结型晶体管 PBSS8510PA,115
PBSS8510PA,115
Single BJT Transistors
Freescale Semiconductor, Inc. (NXP Semiconductors)
Tape an
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TYPEDESCRIPTION
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.21.00.75
SVHC Yes
Automotive No
PPAP No
Category Bipolar Power
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 100
Maximum Collector-Emitter Voltage (V) 100
Maximum Emitter Base Voltage (V) 6
Maximum Base Emitter Saturation Voltage (V) 0.9@10mA@1A|1.1@260mA@5.2A
Maximum Collector-Emitter Saturation Voltage (V) 0.04@50mA@0.5A|0.075@50mA@1A|0.16@10mA@1A|0.22@400mA@4A|0.34@260mA@5.2A
Maximum DC Collector Current (A) 5.2
Minimum DC Current Gain 180@0.5A@2V|150@1A@2V|95@2A@2V|30@6A@2V
Maximum Power Dissipation (mW) 2100
Maximum Transition Frequency (MHz) 150(Typ)
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 0.61(Max)
Package Width 2
Package Length 2
PCB changed 3
Supplier Package HUSON
Packaging Tape and Reel
Part Status Active
Type NPN
Pin Count 3
Configuration Single
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