+86 19924921798

RN1410,LF

  •  RN1410,LF
  • image of 预偏置双极性结型晶体管 RN1410,LF
RN1410,LF
Pre-Biased BJT Transistors
Toshiba Semiconductor and Storage
RN1410,LF datas
-
TO-236-3, SC-59, SOT-23-3
YES
TYPEDESCRIPTION
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 4.7 k Ω
1.jpg
 Orignal genuine       Each chip comes from the original factory


2.jpg
       

 Main products       Only make original stock


3.jpg
        

 Spot inventory       Only make original stock

4.jpg       

Original stockBom DistributioAffordable Price

1

0.38

0.38

10

0.359245

3.59245

100

0.339099

33.9099

500

0.319528

159.764

1000

0.300498

300.498

captcha

+86-755-82760106

ruizhengwei@gmail.com
0