+86 19924921798

TDTC123J,LM

  •  TDTC123J,LM
  • image of 预偏置双极性结型晶体管 TDTC123J,LM
TDTC123J,LM
Pre-Biased BJT Transistors
Toshiba Semiconductor and Storage
TDTC123J,LM dat
-
TO-236-3, SC-59, SOT-23-3
YES
TYPEDESCRIPTION
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Mounting Style SMD/SMT
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Product Status Active
Transistor Polarity NPN
Channel Mode Enhancement
Manufacturer Toshiba
Brand Toshiba
Series -
Packaging Cut Tape
Subcategory Transistors
Configuration Single
Power - Max 320 mW
Product Type BJTs - Bipolar Transistors - Pre-Biased
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 100 mA
Frequency - Transition 250 MHz
Resistor - Base (R1) 2.2 kOhms
Continuous Collector Current 100 mA
Product Category Bipolar Transistors - Pre-Biased
1.jpg
 Orignal genuine       Each chip comes from the original factory


2.jpg
       

 Main products       Only make original stock


3.jpg
        

 Spot inventory       Only make original stock

4.jpg       

Original stockBom DistributioAffordable Price

1

0.34

0.34

10

0.320377

3.20377

100

0.301299

30.1299

500

0.282735

141.3675

1000

0.264656

264.656

captcha

+86-755-82760106

ruizhengwei@gmail.com
0