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IRHY9130CM

  •  IRHY9130CM
  • image of 金属氧化物半导体场效应晶体管阵列 IRHY9130CM
IRHY9130CM
MOSFETs Transistors Arrays
Infineon
IRHY9130CM data
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YES
TYPEDESCRIPTION
Surface Mount NO
Number of Terminals 3
Transistor Element Material SILICON
EU RoHS Not Compliant
ECCN (US) Contact Export
HTS 8541.29.00.95
Automotive No
PPAP No
Category Power MOSFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 100
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 11
Typical Gate Charge @ Vgs (nC) 45(Max)@12V
Typical Input Capacitance @ Vds (pF) 1200@25V
Maximum Power Dissipation (mW) 75000
Typical Fall Time (ns) 70(Max)
Typical Rise Time (ns) 50(Max)
Typical Turn-Off Delay Time (ns) 70(Max)
Typical Turn-On Delay Time (ns) 30(Max)
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Height 10.92(Max)
Package Width 5.08(Max)
Package Length 10.66(Max)
PCB changed 3
Tab Tab
Supplier Package TO-257AA
Package Shape RECTANGULAR
Manufacturer Infineon Technologies AG
JESD-609 Code e0
Part Status Active
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature RADIATION HARDENED
Subcategory Other Transistors
Terminal Position SINGLE
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-MSFM-P3
Qualification Status Not Qualified
Number of Elements 1
Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Transistor Application SWITCHING
Polarity/Channel Type P-CHANNEL
JEDEC-95 Code TO-257AA
Drain Current-Max (Abs) (ID) 11 A
Drain-source On Resistance-Max 0.35 Ω
Pulsed Drain Current-Max (IDM) 44 A
DS Breakdown Voltage-Min 100 V
Channel Type P
Avalanche Energy Rating (Eas) 150 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 75 W
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