Orignal genuine | Each chip comes from the original factory |
| |
Main products | Only make original stock |
| |
Spot inventory | Only make original stock |
|
Original stock | Bom Distributio | Affordable Price |
: | IRHY9130CM |
---|---|
: | MOSFETs Transistors Arrays |
: | Infineon |
: | IRHY9130CM data |
: | - |
: | - |
: | YES |
TYPE | DESCRIPTION |
Surface Mount | NO |
Number of Terminals | 3 |
Transistor Element Material | SILICON |
EU RoHS | Not Compliant |
ECCN (US) | Contact Export |
HTS | 8541.29.00.95 |
Automotive | No |
PPAP | No |
Category | Power MOSFET |
Channel Mode | Enhancement |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Continuous Drain Current (A) | 11 |
Typical Gate Charge @ Vgs (nC) | 45(Max)@12V |
Typical Input Capacitance @ Vds (pF) | 1200@25V |
Maximum Power Dissipation (mW) | 75000 |
Typical Fall Time (ns) | 70(Max) |
Typical Rise Time (ns) | 50(Max) |
Typical Turn-Off Delay Time (ns) | 70(Max) |
Typical Turn-On Delay Time (ns) | 30(Max) |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Mounting | Through Hole |
Package Height | 10.92(Max) |
Package Width | 5.08(Max) |
Package Length | 10.66(Max) |
PCB changed | 3 |
Tab | Tab |
Supplier Package | TO-257AA |
Package Shape | RECTANGULAR |
Manufacturer | Infineon Technologies AG |
JESD-609 Code | e0 |
Part Status | Active |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Additional Feature | RADIATION HARDENED |
Subcategory | Other Transistors |
Terminal Position | SINGLE |
Terminal Form | PIN/PEG |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | unknown |
Pin Count | 3 |
JESD-30 Code | R-MSFM-P3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | ISOLATED |
Transistor Application | SWITCHING |
Polarity/Channel Type | P-CHANNEL |
JEDEC-95 Code | TO-257AA |
Drain Current-Max (Abs) (ID) | 11 A |
Drain-source On Resistance-Max | 0.35 Ω |
Pulsed Drain Current-Max (IDM) | 44 A |
DS Breakdown Voltage-Min | 100 V |
Channel Type | P |
Avalanche Energy Rating (Eas) | 150 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Power Dissipation-Max (Abs) | 75 W |
Orignal genuine | Each chip comes from the original factory |
| |
Main products | Only make original stock |
| |
Spot inventory | Only make original stock |
|
Original stock | Bom Distributio | Affordable Price |