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IRHYS597034CM

  •  IRHYS597034CM
  • image of 金属氧化物半导体场效应晶体管阵列 IRHYS597034CM
IRHYS597034CM
MOSFETs Transistors Arrays
Infineon
IRHYS597034CM d
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YES
TYPEDESCRIPTION
EU RoHS Not Compliant
ECCN (US) Contact Export
HTS 8541.29.00.95
Automotive No
PPAP No
Category Power MOSFET
Process Technology R5
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 60
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 4
Maximum Continuous Drain Current (A) 20
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 10
Typical Gate Charge @ Vgs (nC) 45(Max)@12V
Typical Input Capacitance @ Vds (pF) 1560@25V
Maximum Power Dissipation (mW) 75000
Typical Fall Time (ns) 50(Max)
Typical Rise Time (ns) 65(Max)
Typical Turn-Off Delay Time (ns) 75(Max)
Typical Turn-On Delay Time (ns) 25(Max)
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Height 10.92(Max)
Package Width 5.08(Max)
Package Length 10.66(Max)
PCB changed 3
Tab Tab
Supplier Package TO-257AA
Lead Shape Through Hole
Part Status Active
Pin Count 3
Configuration Single
Channel Type P
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