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MMRF1019NR4

  •  MMRF1019NR4
  • image of 射频金属氧化物半导体场效应晶体管 MMRF1019NR4
MMRF1019NR4
RF MOSFETs Transistors
NXP USA Inc.
MMRF1019NR4 dat
-
PLD-1.5
YES
TYPEDESCRIPTION
Factory Lead Time 10 Weeks
Package / Case PLD-1.5
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated 100V
HTS Code 8541.29.00.75
Terminal Position QUAD
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Frequency 1.09GHz
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PQSO-N4
Operating Mode ENHANCEMENT MODE
Current - Test 10mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 25dB
Power - Output 10W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V
RoHS Status ROHS3 Compliant
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