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BSS169L6327HTSA1

  •  BSS169L6327HTSA1
  • image of 单金属氧化物半导体场效应晶体管晶体管 BSS169L6327HTSA1
BSS169L6327HTSA1
Single MOSFETs Transistors
Infineon Technologies
N-Channel Tape
-
TO-236-3, SC-59, SOT-23-3
YES
TYPEDESCRIPTION
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SIPMOS®
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Power Dissipation-Max 360mW Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 68pF @ 25V
Current - Continuous Drain (Id) @ 25°C 170mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 7V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 0V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 170mA
Input Capacitance 68pF
FET Feature Depletion Mode
Rds On Max 6 Ω
RoHS Status RoHS Compliant
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