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IPI70N04S307AKSA1

  •  IPI70N04S307AKSA1
  • image of 单金属氧化物半导体场效应晶体管晶体管 IPI70N04S307AKSA1
IPI70N04S307AKSA1
Single MOSFETs Transistors
Infineon Technologies
N-Channel Tube
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TO-262-3 Long Leads, I2Pak, TO-262AA
YES
TYPEDESCRIPTION
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
HTS Code 8541.29.00.95
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 79W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.5m Ω @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 50μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 80A
Max Dual Supply Voltage 40V
Drain Current-Max (Abs) (ID) 70A
Drain-source On Resistance-Max 0.0071Ohm
Avalanche Energy Rating (Eas) 145 mJ
RoHS Status RoHS Compliant
Lead Free Contains Lead
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