 | |
| Orignal genuine | Each chip comes from the original factory |
| |
| Main products | Only make original stock |
| |
| Spot inventory | Only make original stock |
| |
| Original stock | Bom Distributio | Affordable Price |
| ： | IRF6614TR1 |
|---|---|
| ： | Single MOSFETs Transistors |
| ： | Infineon Technologies |
| ： | N-Channel Tape |
| ： | - |
| ： | DirectFET™ Isometric ST |
| ： | YES |
| TYPE | DESCRIPTION |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric ST |
| Number of Pins | 7 |
| Supplier Device Package | DIRECTFET™ ST |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | HEXFET® |
| Published | 2006 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Resistance | 8.3mOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Power Dissipation-Max | 2.1W Ta 42W Tc |
| Power Dissipation | 2.1W |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 12.7A, 10V |
| Vgs(th) (Max) @ Id | 2.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2560pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 12.7A Ta 55A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 18 ns |
| Reverse Recovery Time | 15 ns |
| Continuous Drain Current (ID) | 10.1A |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 40V |
| Input Capacitance | 2.56nF |
| Drain to Source Resistance | 5.9mOhm |
| Rds On Max | 8.3 mΩ |
| Nominal Vgs | 1.8 V |
| Width | 3.95mm |
| REACH SVHC | No SVHC |
| RoHS Status | Non-RoHS Compliant |
| |
| Orignal genuine | Each chip comes from the original factory |
| |
| Main products | Only make original stock |
| |
| Spot inventory | Only make original stock |
| |
| Original stock | Bom Distributio | Affordable Price |
