Ruizhengwei Electronics

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CIH10T8N2JNC	SAMSUNG	-	0603	Inductor High Frequency Chip Multi-Layer 0.0082uH 5% 100MHz 10Q-Factor Ceramic 0.7A 0.24Ohm DCR 0603 T/R	DataSheet	0.0554
CIH05T6N8JNC	SAMSUNG	-	-55C to 125C	Inductor High Frequency Chip Multi-Layer 0.0068uH 5% 100MHz 8Q-Factor Ceramic 0.3A 0.32Ohm DCR 0402 T/R	DataSheet	0.0038
CIH10T3N9SNC	SAMSUNG	-	0603	Inductor High Frequency Chip Multi-Layer 0.0039uH 0.3nH 100MHz 10Q-Factor Ceramic 0.8A 0.14Ohm DCR 0603 T/R	DataSheet	0.0045
CIGT252010EH1R0MNE	SAMSUNG	-		Inductor Power Thin Film 1uH 20% 1MHz Metal 4.1A 0.03Ohm DCR 1008 T/R		0.2042
CIH10T82NJNC	SAMSUNG	-	0603	Inductor High Frequency Chip Multi-Layer 0.082uH 5% 100MHz 12Q-Factor Ceramic 0.35A 0.95Ohm DCR 0603 T/R	DataSheet	0.0047
CIGT252008LM1R0MNE	SAMSUNG	-		Metal Composite Power Inductor (Thin Film)	DataSheet	0.1231
CIH05T12NJNC	SAMSUNG	-	5%	Inductor High Frequency Chip Multi-Layer 0.012uH 5% 100MHz 8Q-Factor Ceramic 0.3A 0.5Ohm DCR 0402 T/R	DataSheet	0.0447
CIG10F2R2MNC	SAMSUNG	-	0603	Inductor Power Chip Shielded Multi-Layer 2.2uH 20% 1MHz Ferrite 0.5A 0.45Ohm DCR 0603 T/R	DataSheet	0.0243
CIG22H1R5MNE	SAMSUNG	-	20%	Inductor Power Chip Shielded Multi-Layer 1.5uH 20% 1MHz Ferrite 1.5A 0.104Ohm DCR 1008 T/R	DataSheet	0.157
CIH10T68NJNC	SAMSUNG	-	0603	Inductor High Frequency Chip Multi-Layer 0.068uH 5% 100MHz 12Q-Factor Ceramic 0.35A 0.85Ohm DCR 0603 T/R	DataSheet	0.0645
CIH10T2N2SNC	SAMSUNG	-	0603	Inductor High Frequency Chip Multi-Layer 0.0022uH 0.3nH 100MHz 8Q-Factor Ceramic 0.8A 0.1Ohm DCR 0603 T/R	DataSheet	0.0174
CIL21NR22KNE	SAMSUNG	-	10%	Inductor RF Shielded Multi-Layer 0.22uH 10% 25MHz 20Q-Factor Ferrite 0.25A 0.3Ohm DCR 0805 T/R	DataSheet	0.0024
CIH05T4N7SNC	SAMSUNG	-	-55C to 125C	Inductor High Frequency Chip Multi-Layer 0.0047uH 0.3nH 100MHz 8Q-Factor Ceramic 0.3A 0.24Ohm DCR 0402 T/R	DataSheet	0.0015
CIH10T4N7SNC	SAMSUNG	-	-55C to 125C	Inductor High Frequency Chip Multi-Layer 0.0047uH 0.3nH 100MHz 10Q-Factor Ceramic 0.8A 0.16Ohm DCR 0603 T/R	DataSheet	market price
CIH05T82NJNC	SAMSUNG	-	-55C to 125C	Inductor High Frequency Chip Multi-Layer 0.082uH 5% 100MHz 8Q-Factor Ceramic 0.15A 1.6Ohm DCR 0402 T/R	DataSheet	market price
CIH05T68NJNC	SAMSUNG	-	-55C to 125C	Inductor High Frequency Chip Multi-Layer 0.068uH 5% 100MHz 8Q-Factor Ceramic 0.18A 1.4Ohm DCR 0402 T/R	DataSheet	market price
CIH03T4N7SNC	SAMSUNG	-	-55C to 125C	Inductor High Frequency Chip Multi-Layer 0.0047uH 0.3nH 100MHz 5Q-Factor Ceramic 0.2A 0.4Ohm DCR 0201 T/R	DataSheet	market price
CIH03T8N2JNC	SAMSUNG	-	-55C to 125C	Inductor High Frequency Chip Multi-Layer 0.0082uH 5% 100MHz 5Q-Factor Ceramic 0.15A 0.55Ohm DCR 0201 T/R	DataSheet	market price
CIH05T15NJNC	SAMSUNG	-	5%	Inductor High Frequency Chip Multi-Layer 0.015uH 5% 100MHz 8Q-Factor Ceramic 0.3A 0.55Ohm DCR 0402 T/R	DataSheet	market price
CIH05T2N7SNC	SAMSUNG	-	-55C to 125C	Inductor High Frequency Chip Multi-Layer 0.0027uH 0.3nH 100MHz 8Q-Factor Ceramic 0.3A 0.17Ohm DCR 0402 T/R	DataSheet	market price
CIH05T27NJNC	SAMSUNG	-	5%	Inductor High Frequency Chip Multi-Layer 0.027uH 5% 100MHz 8Q-Factor Ceramic 0.25A 0.9Ohm DCR 0402 T/R	DataSheet	market price
CIH05T8N2JNC	SAMSUNG	-	-55C to 125C	Inductor High Frequency Chip Multi-Layer 0.0082uH 5% 100MHz 8Q-Factor Ceramic 0.3A 0.37Ohm DCR 0402 T/R	DataSheet	market price
CIH05T22NJNC	SAMSUNG	-	5%	Inductor High Frequency Chip Multi-Layer 0.022uH 5% 100MHz 8Q-Factor Ceramic 0.25A 0.8Ohm DCR 0402 T/R	DataSheet	market price
CIG22H3R3MNE	SAMSUNG	-	20%	Inductor Power Chip Shielded Multi-Layer 3.3uH 20% 1MHz Ferrite 1A 0.133Ohm DCR 1008 T/R	DataSheet	market price
CIG22H1R0MNE	SAMSUNG	-	-40C to 125C	Inductor Power Chip Shielded Multi-Layer 1uH 20% 1MHz Ferrite 1.5A 0.08Ohm DCR 1008 T/R	DataSheet	market price

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Inductor High Frequency Chip Multi-Layer 0.0082uH 5% 100MHz 10Q-Factor Ceramic 0.7A 0.24Ohm DCR 0603 T/R

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Inductor Power Chip Shielded Multi-Layer 2.2uH 20% 1MHz Ferrite 0.5A 0.45Ohm DCR 0603 T/R

CIG22H1R5MNE

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Inductor Power Chip Shielded Multi-Layer 1.5uH 20% 1MHz Ferrite 1.5A 0.104Ohm DCR 1008 T/R

CIH10T68NJNC

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Inductor High Frequency Chip Multi-Layer 0.0022uH 0.3nH 100MHz 8Q-Factor Ceramic 0.8A 0.1Ohm DCR 0603 T/R

CIL21NR22KNE

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10%

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Inductor RF Shielded Multi-Layer 0.22uH 10% 25MHz 20Q-Factor Ferrite 0.25A 0.3Ohm DCR 0805 T/R

CIH05T4N7SNC

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-55C to 125C

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Inductor High Frequency Chip Multi-Layer 0.0047uH 0.3nH 100MHz 8Q-Factor Ceramic 0.3A 0.24Ohm DCR 0402 T/R

CIH10T4N7SNC

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-55C to 125C

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Inductor High Frequency Chip Multi-Layer 0.0047uH 0.3nH 100MHz 10Q-Factor Ceramic 0.8A 0.16Ohm DCR 0603 T/R

CIH05T82NJNC

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-55C to 125C

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Inductor High Frequency Chip Multi-Layer 0.082uH 5% 100MHz 8Q-Factor Ceramic 0.15A 1.6Ohm DCR 0402 T/R

CIH05T68NJNC

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SAMSUNG

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-55C to 125C

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Inductor High Frequency Chip Multi-Layer 0.068uH 5% 100MHz 8Q-Factor Ceramic 0.18A 1.4Ohm DCR 0402 T/R

CIH03T4N7SNC

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SAMSUNG

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-55C to 125C

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Inductor High Frequency Chip Multi-Layer 0.0047uH 0.3nH 100MHz 5Q-Factor Ceramic 0.2A 0.4Ohm DCR 0201 T/R

CIH03T8N2JNC

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Inductor High Frequency Chip Multi-Layer 0.0082uH 5% 100MHz 5Q-Factor Ceramic 0.15A 0.55Ohm DCR 0201 T/R

CIH05T15NJNC

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Inductor High Frequency Chip Multi-Layer 0.015uH 5% 100MHz 8Q-Factor Ceramic 0.3A 0.55Ohm DCR 0402 T/R

CIH05T2N7SNC

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-55C to 125C

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Inductor High Frequency Chip Multi-Layer 0.0027uH 0.3nH 100MHz 8Q-Factor Ceramic 0.3A 0.17Ohm DCR 0402 T/R

CIH05T27NJNC

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Inductor High Frequency Chip Multi-Layer 0.027uH 5% 100MHz 8Q-Factor Ceramic 0.25A 0.9Ohm DCR 0402 T/R

CIH05T8N2JNC

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Inductor High Frequency Chip Multi-Layer 0.0082uH 5% 100MHz 8Q-Factor Ceramic 0.3A 0.37Ohm DCR 0402 T/R

CIH05T22NJNC

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Inductor High Frequency Chip Multi-Layer 0.022uH 5% 100MHz 8Q-Factor Ceramic 0.25A 0.8Ohm DCR 0402 T/R

CIG22H3R3MNE

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SAMSUNG

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20%

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Inductor Power Chip Shielded Multi-Layer 3.3uH 20% 1MHz Ferrite 1A 0.133Ohm DCR 1008 T/R

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Inductor Power Chip Shielded Multi-Layer 1uH 20% 1MHz Ferrite 1.5A 0.08Ohm DCR 1008 T/R