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IPB180N10S402ATMA1

  •  IPB180N10S402ATMA1
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IPB180N10S402ATMA1
RF Transistors
Infineon
Trans MOSFET N-
-
TO-263-7, D²Pak (6 Leads + Tab)
YES
TYPEDESCRIPTION
Manufacturer Part Number:IPB180N10S402ATMA1
Rohs Code:Yes
Part Life Cycle Code:Active
Ihs Manufacturer:INFINEON TECHNOLOGIES AG
Package Description:SMALL OUTLINE, R-PSSO-G6
Reach Compliance Code:not_compliant
ECCN Code:EAR99
Factory Lead Time:14 Weeks
Manufacturer:Infineon Technologies AG
Risk Rank:1.64
Samacsys Description:MOSFET N-Ch 100V 180A OptiMOS-T2 TO263-7
Avalanche Energy Rating (Eas):1110 mJ
Case Connection:DRAIN
Configuration:SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:100 V
Drain Current-Max (ID):180 A
Drain-source On Resistance-Max:0.0025 Ω
FET Technology:METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:TO-263
JESD-30 Code:R-PSSO-G6
JESD-609 Code:e3
Moisture Sensitivity Level:1
Number of Elements:1
Number of Terminals:6
Operating Mode:ENHANCEMENT MODE
Package Body Material:PLASTIC/EPOXY
Package Shape:RECTANGULAR
Package Style:SMALL OUTLINE
Peak Reflow Temperature (Cel):NOT SPECIFIED
Polarity/Channel Type:N-CHANNEL
Pulsed Drain Current-Max (IDM):720 A
Reference Standard:AEC-Q101
Surface Mount:YES
Terminal Finish:Tin (Sn)
Terminal Form:GULL WING
Terminal Position:SINGLE
[email protected] Reflow Temperature-Max (s):NOT SPECIFIED
Transistor Element Material:SILICON
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Original stockBom DistributioAffordable Price

1

8.075

8.075

10

7.6633

76.633

100

7.2615

726.15

500

6.8598

3429.9

1000

6.458

6458

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