+86 19924921798

BFG35,115

  •  BFG35,115
  • image of 射频双极性结型晶体管 BFG35,115
BFG35,115
RF BJT Transistors
NXP USA Inc.
BFG35,115 datas
-
TO-261-4, TO-261AA
YES
TYPEDESCRIPTION
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 1995
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFG35
Pin Count 4
Reference Standard CECC
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 100mA 10V
Voltage - Collector Emitter Breakdown (Max) 18V
Current - Collector (Ic) (Max) 150mA
Transition Frequency 4000MHz
Frequency - Transition 4GHz
Power Dissipation-Max (Abs) 1W
Highest Frequency Band ULTRA HIGH FREQUENCY B
Power Dissipation Ambient-Max 1W
RoHS Status ROHS3 Compliant
1.jpg
 Orignal genuine       Each chip comes from the original factory


2.jpg
       

 Main products       Only make original stock


3.jpg
        

 Spot inventory       Only make original stock

4.jpg       

Original stockBom DistributioAffordable Price

captcha

+86-755-82760106

ruizhengwei@gmail.com
0