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BFG505W/X,115

  •  BFG505W/X,115
  • image of 射频双极性结型晶体管 BFG505W/X,115
BFG505W/X,115
RF BJT Transistors
Freescale Semiconductor, Inc. (NXP Semiconductors)
BFG505W/X,115 d
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YES
TYPEDESCRIPTION
Material Si
EU RoHS Supplier Unconfirmed
ECCN (US) EAR99
Automotive No
PPAP No
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 20
Maximum Collector-Emitter Voltage (V) 15
Maximum Collector-Emitter Voltage Range (V) &l;20
Maximum Emitter Base Voltage (V) 2.5
Maximum DC Collector Current (A) 0.018
Maximum DC Collector Current Range (A) 0.001 to 0.06
Minimum DC Current Gain 60@5mA@6V
Minimum DC Current Gain Range 50 to 120
Maximum Power Dissipation (mW) 500
Maximum Transition Frequency (MHz) 9000(Typ)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 1(Max)
Package Width 1.35(Max)
Package Length 2.2(Max)
PCB changed 3
Tab Tab
Standard Package Name SOP
Supplier Package SO
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Pin Count 4
Configuration Single Dual Emitter
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