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BFP193WE6327XT

  •  BFP193WE6327XT
  • image of 射频双极性结型晶体管 BFP193WE6327XT
BFP193WE6327XT
RF BJT Transistors
Infineon
BFP193WE6327XT
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YES
TYPEDESCRIPTION
Material Si
EU RoHS Compliant
ECCN (US) EAR99
Automotive Yes
PPAP Unknown
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 20
Maximum Collector-Emitter Voltage (V) 12
Maximum Collector-Emitter Voltage Range (V) &l;20
Maximum Emitter Base Voltage (V) 2
Maximum DC Collector Current (A) 0.08
Maximum DC Collector Current Range (A) 0.06 to 0.12
Minimum DC Current Gain 70@30mA@8V
Minimum DC Current Gain Range 50 to 120
Maximum Power Dissipation (mW) 580
Maximum Transition Frequency (MHz) 8000(Typ)
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
Mounting Surface Mount
Package Height 0.9(Max)
Package Width 1.25
Package Length 2
PCB changed 3
Tab Tab
Standard Package Name SOT
Supplier Package SOT-343
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Pin Count 4
Configuration Single Dual Emitter
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 Orignal genuine       Each chip comes from the original factory


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 Main products       Only make original stock


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 Spot inventory       Only make original stock

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Original stockBom DistributioAffordable Price

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