+86 19924921798

BFP620E7764XT

  •  BFP620E7764XT
  • image of 射频双极性结型晶体管 BFP620E7764XT
BFP620E7764XT
RF BJT Transistors
Infineon
BFP620E7764XT d
-
-
YES
TYPEDESCRIPTION
Material SiGe
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 7.5
Maximum Collector-Emitter Voltage (V) 2.3
Maximum Collector-Emitter Voltage Range (V) &l;20
Maximum Emitter Base Voltage (V) 1.2
Maximum DC Collector Current (A) 0.08
Maximum DC Collector Current Range (A) 0.06 to 0.12
Minimum DC Current Gain 110@50mA@1.5V
Minimum DC Current Gain Range 50 to 120
Maximum Power Dissipation (mW) 185
Maximum Transition Frequency (MHz) 65000(Typ)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 0.9(Max)
Package Width 1.25
Package Length 2
PCB changed 3
Tab Tab
Standard Package Name SOT
Supplier Package SOT-343
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Pin Count 4
Configuration Single Dual Emitter
1.jpg
 Orignal genuine       Each chip comes from the original factory


2.jpg
       

 Main products       Only make original stock


3.jpg
        

 Spot inventory       Only make original stock

4.jpg       

Original stockBom DistributioAffordable Price

captcha

+86-755-82760106

ruizhengwei@gmail.com
0